SLC Parallel NAND Flash: A Comprehensive Overview

NAND flash memory is a breakthrough in non-volatile memory devices. Non-volatile memory is capable to retain data without being connected to a power outlet. The internal and external memory components strongly rely on NAND flash because of its non-volatile nature. The popular memory devices such as SSDs use this NAND technology to power up digital applications. The performance of a memory device constituting NAND flash is based on its memory cells. The cells with two to three numbers of bits provide slow performance as compared to those having storage of one bit per memory cell. Many versions of NAND are present in the market such as TLC, SLC, and MLC. These NAND versions can be differentiated by their storage capacity and tolerance ratio. FORESEE SLC parallel NAND flash is a NAND-based memory fixture that provides the fast yield as compared to MLC and TLC versions.

FORESEE SLC Parallel NAND Flash Basics

This memory fixture follows the standard NAND memory interface to boost the functionality of multiple platforms. It is utilizing the multiplexed 8-bit bus for providing faster data transmission, communication, and computing. It is developed to provide maximum storage facility for smart applications that demand stability, non-volatility, efficiency, and high tolerance. These memory fixtures come in different capacity ranges to match the needs of several systems. It is characterized by intelligent features to provide maximum optimality and sustainability. These fixtures are offering signal integrity because of their high signal protocols that provide quick signal management. It is developed to provide power efficiency by utilizing only 1.8V voltage for its operation. The R&D team ensures that the product provides the high reliability and durability throughout its lifespan. The in-house firmware guarantees stability and compactness which makes it a precise memory unit for certain applications such as IoT, automotive, etc.

Product Parameter

· 1.8V (1.7V 1.95V) or 3.0V (2.7V 3.6V) power supply.

· ONFi Compatible Page Size: 2048 + 128 Byte or 2048 + 64 Byte.

· Package types include TSOP-48, FBGA-63, and FBGA-48.

· 1GB to 8GB density.

· High resiliency: 10-year data retention and up to 100,000 program/erase cycles.

· Wide temperature range of operation: -40°C~85°C

· Cache Read/Program operation is a high-performance feature.

· OTP, UID, and Array Protection are all security features as per unit of capacity than NOR Flash.

ECC Circuitry for Bad Block Management

There is a limitation to the number of read/write cycles in flash memory. To overcome this limitation, our fixtures are utilizing the wear-leveling method. It is the method of distributing the data in a certain location that aims to enhance the service period of the flash memory unit. Knowing the significance of data integrity for a system, our SLC memory unit employs the 4-bit ECC circuitry. This is responsible for dealing with an error during data reading. It masterly handles the error and restores the health of a device thus playing a vital role in maintaining the smoothness of a system.

Long Service Life up to 10 Years

The constant stability and compactness of this product make it a long-run product, providing services for up to 10 years and having 100K read/erase cycles. SLC Parallel NAND Flash is a major game changer not only in consumer products but also powering up intelligent industrial systems, offering speed and tolerance.

Advanced Software Block Protect Feature

This advanced feature is responsible for protecting the entire chip from reprogramming/deleting. It is designed to protect the selected block area from erasing by utilizing the bit data 1. It can be unprotected by utilizing the bit data 0. Thus, this product guarantees high reliability and data integrity.

Unique ID

The unique ID feature is allowing users to securely manage sensitive information in a secure room and access it by using a unique ID. OTP area is one-time programmable and can be deleted or accessed by unauthorized users, thus providing a secure room for information handling. The OTP mode turns the information into the read-only mode.

Comparing SLC, TLC, and MLC NAND Technologies

Single-level Cell (SLC): SLC parallel NAND flash is a type of flash memory that stores data using a single-level cell configuration. This makes it a more reliable and durable type of flash memory than the more common multi-level cell memory۔ The SLC NAND is designed to keep 1-bit information at a single cell level. Since it stores information at a single level so there is much faster data retrieval and processing. Its extreme endurance abilities make it a most-selling memory item among others. But it has a con of having low capacities as compared to other NAND versions. Its efficient performance occurs due to its 100K read/erase cycles thus offering longer service periods than others.

Multi-level Cell (MLC): This version is named MLC for its multiple bits per cell storage feature. Each cell utilizes the two bits thus it provides large storage capacities as compared to SLC. There is the highest chance of data error occurring in the case of MLC because of the lack of error-correcting technologies. This version offers only 10K read/ease cycles which leads to low tolerance than SLC. It is not the right memory device for enterprise applications yet it is greatly found in consumer systems that require high capacity and less endurance features.

Triple-level Cell (TLC): Since the release of the first NAND flash memory such as SLC, the technology has undergone a rapid evolution. It is further followed by MLC. To continue scaling NAND flash, a new technology called Triple Level Cell NAND has been developed which can keep three bits of data per cell. It offers the high storage capacity over previous NAND technologies but at the expense of lower data transfer rates and lower tolerance, offering 3K read/erase cycles.

Conclusion

The NAND memory technologies are growing day by day to serve storage sectors with immediate solutions. SLC, MLC, and TLC all are the optimum technologies for empowering certain applications. The development of 3D NAND has solved the problem of using low capacities NAND technologies. Many memory fixtures are coming with advanced 3D NAND versions intended to provide the dens capacities and faster performance. FORESEE is concentrating to develop parallel NAND solutions by the utilization of robust firmware algorithms, integrated packaging design such as BGA, TSOP, intelligent technologies, and testing algorithms. Our memory solutions are widely used in various sectors such as IoT, automotive, industrial, commercial, mobile devices, security systems, etc. FORESEE continuous innovation is raising competitiveness and standard in the market.