Different categories of memory technologies have been launched but the leading non-volatile memory technology is flash memory. It is highly preferred by developers because of its re-programmable non-volatile nature. Wide ranges of devices depend on flash memory for handling the massive amount of data and for quick data transmission facility. In the market, two categories of flash memory devices are known one is NAND and another one is NOR. These two categories have evolved into many new memory technologies such as NAND memory is available in Serial NAND, Parallel NAND, and 3D NAND. System developers need to consider many factors when choosing flash memory technology. The right choice of memory technology determines the optimality of a system. It needs deep consideration to choose either a serial NAND or parallel NAND technology. Flash memory such as NAND and NOR consists of floating transistors and is designed to manage data in per memory cells.
The organization of memory cells determines the type of memory used. For example, in serial NAND flash, the memory cells are arranged in series with the NAND gate. Parallel NOR flash is good for storing data code but it has the drawback of slow data transmission due to its wider cell size. Parallel NAND flash having smaller sizes of cells provide much faster data transmission than NOR fixtures. Longsys is a reliable flash memory provider, that knows the needs of embedded developers and is launching flash solutions having higher density capacities, faster read/write speed, excellent power efficiency, and stability.
As the world increasingly moves towards digital media, storage solutions must adapt to keep pace. Traditional hard drives are becoming increasingly obsolete, as they are simply too slow to keep up with the demand for instant access to files. The parallel NAND Flash technology is the leader in data storage due to its high capacity, speed, and stability. Its advantages are especially pronounced in enterprise and consumer applications such as GPON, home IPC, industrial IPC, drones, TV boxes, and smart speakers. The parallel NAND fixtures are equipped with all the required commands that effectively control the working of these fixtures. Longsys lists the premium quality parallel NAND flash solutions developed by FORESEE. Different sizes of parallel NAND chips are available to meet the needs of distinct applications.
NAND memory cells wear out when it has reached their limit of read and write cycles. To give a prolonged service life, FORESEE intelligent technical team has employed the wear leveling technique that handles the write cycles with the assistance of a flash memory controller. The controller manages the basic NAND operations such as wear leveling and ensures the ceaseless operation of a system. The 1Gbit, 2Gbit, and 4Gbit different capacities of Parallel NAND are featured to reinforce the functionality of distinct systems. This NAND fixture utilizes the 8-bit bus which facilitates quick data addressing, transmissions, and command processing. The bus interface is managed by CLE, ALE, CE#, RE#, and WE# signal protocols. These fixtures guarantee high power efficiency as it consumes a voltage between 1.8V-3.3V only. It is a suitable chip for a power system having low-battery capacities.
Approximately, this parallel NAND chip covers only 40% of the PCB area. Its less space utilization feature makes it an ideal choice for data storage applications.
NAND and NOR manage the memory in erase block and the chip having a smaller block size offers a quick erase feature than the one having a larger block size. Parallel NAND fixtures have smaller block sizes than NOR which leads to quickly erase cycles. FORESEE Parallel 4Gbit NAND flash erases the 128K byte block within 4.5ms block erase time while the NOR fixtures require 520ms time for this task.
The initial activation of NOR flash draws extra voltage which leads to higher power consumption than NAND fixtures. NAND is advantageous for devices having low battery life and also it comes with power standby mode which in turn provides high battery optimization. The erase, read, and write cycle operations are done by drawing only a few volts of power. The FORESEE Parallel 4Gbit flash provides 25µs random read operations, 4.5ms block erases, and 40 MHz data transfer rate performance.
It is designed by using quality-grade materials which ensure excellent permanence. The in-house firmware is robust enough to withstand extreme working conditions without getting deformed when the temperature reaches an extreme. This flash memory is tested to provide higher endurance within the temperature ranges of -40°C to 85°C. It is further tested to provide higher endurance up to 100K read and write cycles. The use of an advanced program enables this chip to offer high data retention for up to 10 years. This higher long service period is also the result of the smaller block size used in NAND technology.
Memory chips having innovative features offer uninterrupted data processing. ECC circuitry detects errors and provides quick correction thus it ensures data correctness and consistency leading to uninterrupted data processing. FORESEE NAND chips are equipped with hardware write to protect features for providing extensive code protection against unauthorized write. Furthermore, it has software block protection and a unique ID feature giving more security to data.
NAND solutions are the perfect choice for developers when a system demands faster read/write operations and wide densities. Longsys NAND fixtures are serving the local and global market and continue to grow this product line further to capitalize on this opportunity. To provide top-quality fixtures, we will further focus on four main areas in the coming year: product development, sales and marketing, R&D, and operations.
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