Parallel NAND Flash-01
Parallel NAND Flash-02
Parallel NAND Flash-01
Parallel NAND Flash-02

Parallel NAND Flash

Comprehensive test, including 80 sub-items in 50 major items, and actual defect parts per million (DPPM) of less than 100
Product Advantages

The product has undergone a comprehensive test including 80 sub-items in 50 major items, and the actual DPPM is less than 100.
As one of our main products, it features a 1xnm process, build-in 4-bit ECC verification, and high density, thus suitable for big data storage.
It also supports OTP, allowing more room for customers to securely store information.

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Product Parameter
Product Series Capacity Operating Temperature Package Voltage P/N Bit Width Size Data Sheet
Parallel NAND Flash 1Gb -40℃~85℃ TSOP48 3.3V FSNS8A001G-TWT x8 12*20*1.0 mm
Parallel NAND Flash 1Gb -40℃~85℃ TSOP48 1.8V FSNU8A001G-TWT x8 12*20*1.0 mm
Parallel NAND Flash 2Gb -40℃~85℃ TSOP48 3.3V FSNS8A002G-TWT x8 12*20*1.0 mm
Parallel NAND Flash 2Gb -40℃~85℃ TSOP48 1.8V FSNU8A002G-TWT x8 12*20*1.0 mm
Parallel NAND Flash 4Gb -40℃~85℃ TSOP48 3.3V FS33ND04GS108TFI0 x8 12*20*1.0 mm
Parallel NAND Flash 4Gb -40℃~85℃ BGA63 3.3V FS33ND04GS108BFI0 x8 9*11*1.0 mm
Product Features
  • 01
    The operating voltage of 3.3V complies with mainstream product standards.

  • 02
    The operating temperature range of –40°C to +85°C meets the temperature requirements of industrial-grade products.

  • 03
    The capacity from 1Gbit to 4Gbit can meet various capacity requirements.

  • 04
    The data retention period is up to 10 years with 100,000 write/erase cycles.

Application
  • GPON

  • Industrial IPC

  • Home IPC

  • Drone

  • TV box

  • Smart speaker

Compatible Platforms