UFS 3.1 storage is an embedded storage product solution available in 128GB, 256GB, and 512GB capacities. Ideal to be used in smart cameras, phones and many more.
Firstly it boasts durability, of enduring a high number of program/erase (P/E) cycles ensuring prolonged reliability in environments that necessitate frequent writing. Moreover SLC NAND offers swifter write speeds compared to MLC or TLC NAND making it well suited for applications that demand data recording and storage. Additionally industrial grade SLC NAND is engineered to function within extreme temperature ranges typically spanning from 40°C to +85°C rendering it suitable for industrial settings.
When comparing the longevity of SLC NAND flash memory with types of NAND flash such as MLC (Multi Level Cell) or TLC (Triple Level Cell) the former stands out with an extended lifespan. SLC NAND is typically rated at 100,000 program/erase (P/E) cycles, significantly surpassing the endurance levels of MLC or TLC NAND which range from a thousand, to tens of thousands of P/E cycles.
The prolonged lifespan of SLC NAND flash memory makes it ideal, for applications that involve data writing and long term data storage needs, such as industrial data recording, surveillance systems and automotive event data recorders.
SLC NAND flash memory comes in a variety of sizes and connections to meet the needs of applications. Popular sizes include USB drives, SD cards, CompactFlash cards as built in modules like eMMC (embedded MultiMediaCard) and UFS (Universal Flash Storage). These variations offer capacities, physical dimensions and durability options. Regarding connections SLC NAND flash memory is compatible with interfaces like USB, SATA and PCIe for integration into existing setups. Additionally certain industrial grade SLC NAND flash memory units come with features such, as error correction codes (ECC) wear leveling mechanisms and bad block management to uphold data accuracy and dependability.
2022.07.26
The Universal Flash Storage (UFS) specification is a flash storage specification for digital cameras, mobile phones, and consumer electronics devices. It was created to improve data transfer speed and reliability in flash memory storage while decreasing market confusion and eliminating the need for multiple adapters for different types of cards. The standard covers both permanently connected (embedded) packages within a device (eUFS) and detachable UFS memory cards. This is flash storage designed to meet the expanding demands of 5G. A terabyte of storage and lightning-fast write rates are packed into a small form factor ideal for mobile devices and automotive solutions. This implies reduced buffering and more room, allowing you to fully utilize breakthrough 5G-enabled gadgets.
NAND memory is used by UFS. Multiple stacked 3D TLC NAND flash dies (integrated circuits) with an integrated controller may be used. UFS uses a full-duplex serial LVDS interface, which is scalable to larger bandwidths better than eMMCs' 8-lane parallel and half-duplex interfaces. Universal Flash Storage, unlike eMMC, is built on the SCSI architectural paradigm and supports SCSI Tagged Command Queuing.
The connection speed of 5G data is light years ahead of previous generations, enabling high-capacity data processing. UFS is the flash standard used in high-end and mid-range smartphones, with eMMC being utilized in select entry-level handsets. eMMC storage has several shortcomings over contemporary UFS storage, including the inability to read from and write to storage at the same time. As a result, UFS is a quicker standard than eMMC storage.
The most recent UFS standard is 3.1, which provides three major improvements over UFS 3.0. While it is a new standard, we are already seeing gear and processors that support it on the market. The UFS 3.1 storage system is tailored for 5G-capable devices, answering the demands for more capacity, faster performance, and more management.
· Complete UFS 3.1 hardware implementation
· interop-tested UniPro 1.8 link layer
· MIPI M-PHY 4.1 Interface
· High-speed mode
· UFS 3.1 Host and Device configurations available Gears 1, 2, 3, and 4 are available.
· Supports two lanes with a maximum bandwidth of 23.3 Gbps
· Task management operations
· Multiple partitions (LUNs) (to fake memory) are supported, and partition management is available. Write-protect group size is also defined.
· Supports Write-protect option
· Boot mode operation
· Device enumeration and discovery
· Background operations
· Secure Erase and Trim operations increase security;
UFS 3.1 enables write rates up to three times quicker than the previous version of Universal Flash Storage to suit the demands of 5G devices.
With a transfer rate of 1,200MB/s, this drive improves speed and helps minimize buffering while downloading data, allowing you to enjoy the low-latency connectivity of 5G in an always-connected world.
Memories
As technology progresses in picture and video capture, the devices you use to take them to require more storage space to keep up. UFS 3.1 supports up to 1TB of storage, providing you plenty of room.
Massive power in a small package
The UFS 3.1 is designed to be 0.8mm in height in order to fit into a range of devices. This provides enough area to accommodate all of the technology required for 5G communication while also incorporating quick, massive storage space.
0.8mmT applies exclusively to 128GB capacities.
Designed for your 5G lifestyle
The UFS 3.1 may be found in automotive solutions such as storing navigation systems, machine learning, and other technologies that make your automobile smart. It's also used in various 5G-connected mobile devices that need rapid, large storage, such as AR/VR and recording devices. Whether in your automobile or at home, the UFS 3.1 can meet your high-speed, high-capacity demands.
Obtain astounding JEDEC standard speeds
The UFS 3.1 provides high-performance storage with substantial speed, supported by JEDEC specifications.
It's mostly because of Writing Booster, a technological advancement that increases write speed to enable you to save material as quickly as you can download it.
Writing Booster
As the name implies, it increases the writing speed. This is accomplished by constructing a pseudo-SLC cache, which functions as an easily and frequently accessible reserve memory in flash storage. At the same time, this reserve takes up relatively little physical space (just 1 bit of data in each cell).
Deep Rest
Simply expressed, because voltage regulators are employed for both storage and other activities, the UFS 3.1 will require less power.
Notification of Performance Throttling
This one is quite obvious from the name. The new UFS system will notify the host device of any storage performance constraints caused by a temperature increase.
UFS 3.1 additionally includes the new JEDEC standard JESD220-3 as an option. This HPB enhancement improves read performance in high-density devices by storing their logical-to-physical address map in the system's DRAM.
The ultimate goal of the UFS standard is to deliver customers a better overall user experience while combining the best performance and quality. This new kind of flash memory responds significantly more quickly to data input and output, which speeds up file transfers, booting, and data copying.
UFS, therefore, guarantees consumers seamless multitasking, enabling them to stream high-definition video, play games that need a lot of bandwidth, and run several programs in the foreground at once without experiencing any functional lag. This is also true for systems used in automobiles, where memory bandwidth is becoming a limiting constraint as a result of the rise in camera and sensor counts.
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